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STM32F446RC 数据表(PDF) 107 Page - STMicroelectronics |
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STM32F446RC 数据表(HTML) 107 Page - STMicroelectronics |
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107 / 202 page  DocID027107 Rev 6 107/202 STM32F446xC/E Electrical characteristics 175 6.3.10 Internal clock source characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. High-speed internal (HSI) RC oscillator Figure 27. LACCHSI versus temperature 1. Guaranteed based on test during characterization. Table 41. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Guaranteed by design. -- 1 % TA = - 40 to 105 °C(3) 3. Guaranteed based on test during characterization. - 8 - 4.5 % TA = - 10 to 85 °C(3) - 4 - 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. - 1 - 1 % tsu(HSI)(2) HSI oscillator startup time -- 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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