STM32F446RC datasheet(116/202 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F446xC/E

116/202

DocID027107 Rev 6

6.3.15

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Static latchup

Two complementary static tests are required on six parts to assess the latchup

performance:

•

A supply overvoltage is applied to each power supply pin

•

A current injection is applied to each input, output and configurable I/O pin

Table 52. EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fCPU]

Unit

8/180 MHz

SEMI

Peak level

VDD = 3.3 V, TA = 25 °C, LQFP144

package, conforming to SAE J1752/3

EEMBC, ART ON, all peripheral clocks

enabled, clock dithering disabled.

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to 1GHz

SAE EMI Level

VDD = 3.3 V, TA = 25 °C, LQFP144

package, conforming to SAE J1752/3

EEMBC, ART ON, all peripheral clocks

enabled, clock dithering enabled

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to 1GHz

SAE EMI level

Table 53. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic

discharge voltage

(human body model)

TA = + 25 °C conforming to ANSI/JEDEC JS-001

2000

VESD(CDM)

Electrostatic

discharge voltage

(charge device model)

TA = + 25 °C conforming to ANSI/ESD STM5.3.1,

LQFP64, LQFP100, WLCSP81 packages

500

TA = + 25 °C conforming to ANSI/ESD STM5.3.1,

LQFP144, UFBGA144 (7 x 7), UFBGA144 (10 x 10)

packages

250

1. Guaranteed based on test during characterization.

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