4

DS501-00024-6v1-E

MB85R4M2T



BLOCK DIAGRAM



FUNCTIONAL TRUTH TABLE

Operation Mode

/CE

/WE

/OE

A0 to A17

/ZZ

Sleep

×

×

×

×

L

Standby

H

×

×

×

H

Read

↓

H

L

H or L

H

Address Access Read

L

H

L

↑ or ↓

H

Write(/CE Control)*1

↓

L

×

H or L

H

Write(/WE Control)*1*2

L

↓

×

H or L

H

Address Access Write*1*3

L

↓

×

↑ or ↓

H

Pre-charge

↑

×

×

×

H

Note: H= “H” level,

L= “L” level,

↑= Rising edge,

↓= Falling edge,

×= H, L, ↓ or ↑

*1: In writing cycle, input data is latched at early rising edge of /CE or /WE.

*2: In writing sequence of /WE control, there exists time with data output of reading cycle at the falling

edge of /CE.

*3: In writing sequence of Address Access Write, there exists time with data output of reading cycle at the

address transition.

FeRAM アレイ

262,144×16

コラムデコーダ

/ センスアンプ

/ ライトアンプ

A0～A17

/CE

/WE

/OE

/LB

/UB

/ZZ

アドレス

I/O0～I/O15