Copyright 2024 RAMXEED LIMITED

Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited.

RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's part number

unchanged.

DS501-00024-6v1-E

Memory FeRAM

4 M (256 K × 16) Bit

MB85R4M2T

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DESCRIPTIONS

The MB85R4M2T is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144

words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

process technologies.

The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a

significant improvement over the number of read and write operations supported by Flash memory and

E2PROM. The MB85R4M2T uses a pseudo-SRAM interface.



FEATURES

• Bit configuration

: 262,144 words × 16 bits

• LB and UB data byte control

: Available Configuration of 524,288 words × 8 bits

• Read/write endurance

: 1013 times / 16 bits

• Data retention

: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage

: 1.8 V to 3.6 V

• Low power operation

: Operating power supply current 20 mA (Max)

Standby current 150 μA (Max)

Sleep current 20 μA (Max)

• Operation ambient temperature range : − 40 °C to + 85 °C

• Package

: 44-pin plastic TSOP

RoHS compliant