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TSC2012H 数据表(PDF) 37 Page - STMicroelectronics

部件名 TSC2012H
功能描述  High temperature, high voltage, precision, bidirectional current sense amplifiers
PDF  49 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TSC2012H 数据表(HTML) 37 Page - STMicroelectronics

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5.11
EMI rejection ratio (EMIRR)
The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of current sensing
device. An adverse effect that is common to many current sensing is a change in the offset voltage as a result of
RF signal rectification. Figure 1 shows the EMIRR on pin IN+, Figure 2 shows the EMIRR on pin IN- of the
TSC2011H measured from 400 MHz up to 2.4 GHz.
Figure 73. EMIRR on pin+
400
600
800 1000 1200 1400 1600 1800 2000 2200 2400
0
20
40
60
80
100
120
Vcc=5V, T=25°C
Prf=-10dBm
Frequency (MHz)
Figure 74. EMIRR on pin-
400
600
800 1000 1200 1400 1600 1800 2000 2200 2400
0
20
40
60
80
100
120
Vcc=5V, T=25°C
Prf=-10dBm
Frequency (MHz)
Figure 75. EMIRR on pin+ (TSC2010H) shows the EMIRR on pin IN+, Figure 76. EMIRR on pin- (TSC2010H)
shows the EMIRR on pin IN- of the TSC2010H measured from 10 MHz up to 2.4 GHz.
Figure 75. EMIRR on pin+ (TSC2010H)
200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400
0
20
40
60
80
100
120
Vcc = 5 V, T = 25°C
Prf = 10 dBm
Frequency (MHz)
Figure 76. EMIRR on pin- (TSC2010H)
200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400
0
20
40
60
80
100
120
Vcc = 5 V, T = 25°C
Prf = 10 dBm
Frequency (MHz)
TSC2010H, TSC2011H, TSC2012H
Application information
DS13791 - Rev 2
page 37/49



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