TSC2012 datasheet(9/50 Pages) STMICROELECTRONICS

9 / 50 page

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Iout

Output current

Sink mode

Tmin < T < Tmax

Source mode

Tmin < T < Tmax

Reg Load

Load regulation

Iout = -10 to +10 mA

0.3

1.5

mV/mA

OFFSET adjustment

Ratiometric accuracy

0.5

V/V

Acc

Accuracy, RTO

Voltage applied to Vref1 and Vref2 in

parallel

0.1

Dynamic performance

Small signal -3 dB bandwidth

Rl = 10 kΩ, Cl = 100 pF

kHz

TSC2010

650

820

TSC2010, Tmin < T < Tmax

330

TSC2011

600

750

TSC2011, Tmin < T < Tmax

300

TSC2012

390

490

TSC2012, Tmin < T < Tmax

200

Slew rate

Rl = 10 kΩ, Cl = 100 pF, Vicm = 1 V

V/µs

TSC2010, Vsense = 230 mV

5.7

7.5

TSC2010, Tmin < T < Tmax

4.4

TSC2011, Vsense = 78 mV

5.4

TSC2011, Tmin < T < Tmax

4.1

TSC2012, Vsense = 47 mV

4.4

5.2

TSC2012, Tmin < T < Tmax

3.2

Noise, RTI

Spectral density, RTI

0.1 Hz to 10 Hz

f = 1 kHz

100

µVpp

nV/√Hz

Shutdown function (active high)

Vil

Logical low level

0.3xVcc

Vih

Logical high level

0.7xVcc

Vcc

Iih

Leakage current

Vshdn = Vcc (Shutdown mode)

1.2

µA

Ton

Turn-on time

Vshdn= 5 V to 0 V, Rl = 10 kΩ

µs

TSC2011

TSC2010, TSC2012

Toff

Turn-off time

Vshdn = 0 V to 5 V, Rl= 10 kΩ

µs

TSC2011

TSC2010, TSC2012

Iout

Output leakage current

Shdn active

1. RTI stands for “Related to input”.

2. Vsense = (Vin+) – (Vin-).

TSC2010, TSC2011, TSC2012

Electrical characteristics

DS13057 - Rev 7

page 9/50

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