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VND830MSP 数据表(PDF) 16 Page - STMicroelectronics |
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VND830MSP 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 27 page ![]() Application information VND830MSP 16/27 Doc ID 7379 Rev 5 3 Application information Figure 24. Application schematic 3.1 GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery. 3.1.1 Solution 1: a resistor in the ground line (RGND only) This can be used with any type of load. The following show how to dimension the RGND resistor: 1. RGND ≤ 600 mV / 2 (IS(on)max) 2. RGND ≥ ( -VCC) / ( -IGND) where - IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. Power dissipation in RGND (when VCC < 0 during reverse battery situations) is: PD = ( -VCC) 2/ R GND This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. VCC OUTPUT2 Dld +5V Rprot OUTPUT1 STATUS1 INPUT1 +5V STATUS2 INPUT2 GND +5V μC Rprot Rprot Rprot DGND RGND VGND Obsolete Product(s) - Obsolete Product(s) |
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