DRV8701PRGET datasheet(7/40 Pages) TI2

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DRV8701

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SLVSCX5B – MARCH 2015 – REVISED JULY 2015

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLIES (VM, AVDD, DVDD)

VM operating voltage

5.9

IVM

VM operating supply current

VM = 24 V; nSLEEP high

9.5

TA = 25°C

nSLEEP = 0

IVMQ

VM sleep mode supply current

μA

VM = 24 V

TA = 125°C

(1)

tSLEEP

Sleep time

nSLEEP low to sleep mode

100

μs

tWAKE

Wake-up time

nSLEEP high to output change

tON

Turn-on time

VM > UVLO to output transition

DVDD

Internal logic regulator voltage

External load 0 to 30 mA

3.0

3.3

3.5

AVDD

Internal logic regulator voltage

External load 0 to 30 mA

4.4

4.8

5.2

CHARGE PUMP (VCP, CPH, CPL)

VM = 12 V; IVCP = 0 to 12 mA

20.5

21.5

22.5

VCP

VCP operating voltage

VM = 8 V; IVCP = 0 to 10 mA

13.5

14.4

VM = 5.9 V; IVCP = 0 to 8 mA

9.4

9.9

10.4

VM > 12 V

IVCP

Charge pump current capacity

8 V < VM < 12 V

5.9 V < VM < 8 V

fVCP

(1)

Charge pump switching frequency

VM > UVLO

200

400

700

kHz

CONTROL INPUTS (PH, EN, IN1, IN2, nSLEEP)

VIL

Input logic low voltage

0.8

VIH

Input logic high voltage

1.5

VHYS

Input logic hysteresis

100

IIL

Input logic low current

VIN = 0 V

–5

μA

IIH

Input logic high current

VIN = 5 V

μA

RPD

Pulldown resistance

115

173

Ω

tPD

Propagation delay

PH/EN, IN1/IN2 to GHx/GLx

500

CONTROL OUTPUTS (nFAULT, SNSOUT)

VOL

Output logic low voltage

IO = 2 mA

0.1

IOZ

Output high impedance leakage

VIN = 5 V

–2

μA

FET GATE DRIVERS (GH1, GH2, SH1, SH2, GL1, GL2)

VM > 12 V; VGHS with respect to SHx

8.5

9.5

10.5

High-side VGS gate drive (gate-to-

VGHS

VM = 8 V; VGHS with respect to SHx

5.5

6.4

source)

VM = 5.9 V; VGHS with respect to SHx

3.5

4.0

4.5

VM > 12 V

8.5

9.3

10.5

Low-side VGS gate drive (gate-to-

VGLS

source)

VM = 5.9 V

3.9

4.3

4.9

Observed tDEAD depends on IDRIVE

tDEAD

Output dead time

380

setting

tDRIVE

Gate drive time

2.5

μs

RIDRIVE < 1 kΩ to GND

RIDRIVE = 33 kΩ ±5% to GND

12.5

RIDRIVE = 200 kΩ ±5% to GND, or

IDRIVE,SRC

Peak source current

RIDRIVE < 1 kΩ to AVDD

RIDRIVE > 500 kΩ ±5% to GND

100

RIDRIVE = 68 kΩ ±5% to AVDD

150

(1)

Specified by design and characterization data

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