6

DRV8876

SLVSDS7B – AUGUST 2019 – REVISED NOVEMBER 2019

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Electrical Characteristics (continued)

4.5 V

≤ VVM ≤ 37 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

(1)

At low currents, the IPROPI output has a fixed offset error with respect to the IOUT current through the low-side power MOSFETs.

OPEN-DRAIN OUTPUTS (nFAULT)

VOL

Output logic low voltage

IOD = 5 mA

0.3

V

IOZ

Output logic high current

VOD = 5 V

–2

2

µA

DRIVER OUTPUTS (OUT1, OUT2)

RDS(on)_HS

High-side MOSFET on resistance

VVM = 24 V, IO = 1 A, TJ = 25°C

350

420

mΩ

RDS(on)_LS

Low-side MOSFET on resistance

VVM = 24 V, IO = –1 A, TJ = 25°C

350

420

mΩ

VSD

Body diode forward voltage

ISD = 1 A

0.9

V

tRISE

Output rise time

VVM = 24 V, OUTx rising 10% to 90%

150

ns

tFALL

Output fall time

VVM = 24 V, OUTx falling 90% to 10%

150

ns

tPD

Input to output propagation delay

EN/IN1, PH/IN2 to OUTx, 200 Ω from

OUTx to GND

650

ns

tDEAD

Output dead time

Body diode conducting

300

ns

CURRENT SENSE AND REGULATION (IPROPI, VREF)

AIPROPI

Current mirror scaling factor

1000

µA/A

AERR

(1)

Current mirror scaling error

IOUT < 0.15 A,

5.5 V

≤ VVM ≤ 37 V

–7.5

7.5

mA

0.15 A

≤ IOUT < 0.5 A,

5.5 V

≤ VVM ≤ 37 V

–5

5

%

0.5 A

≤ IOUT ≤ 2 A, 5.5 V ≤ VVM ≤ 37 V,

PWP, –40

℃ ≤ TJ < 125℃

–4

4

0.5 A

≤ IOUT ≤ 2 A, 5.5 V ≤ VVM ≤ 37 V,

PWP, 125

℃ ≤ TJ ≤ 150℃

–5

5

0.5 A

≤ IOUT ≤ 2 A, 5.5 V ≤ VVM ≤ 37 V,

RGT

–6.5

6.5

tOFF

Current regulation off time

25

µs

tDELAY

Current sense delay time

1.6

µs

tDEG

Current regulation deglitch time

0.6

µs

tBLK

Current regulation blanking time

1.1

µs

PROTECTION CIRCUITS

VUVLO

Supply undervoltage lockout (UVLO)

VVM rising

4.3

4.45

4.6

V

VVM falling

4.2

4.35

4.5

V

VUVLO_HYS

Supply UVLO hysteresis

100

mV

tUVLO

Supply undervoltage deglitch time

10

µs

VCPUV

Charge pump undervoltage lockout

VCP with respect to VM, VVCP falling

2.25

V

IOCP

Overcurrent protection trip point

3.5

5.5

A

tOCP

Overcurrent protection deglitch time

3

µs

tRETRY

Overcurrent protection retry time

2

ms

TTSD

Thermal shutdown temperature

160

175

190

°C

THYS

Thermal shutdown hysteresis

20

°C