L9903

6/17

ICP

Charging current

VCP= VVS + 8V

VVS = 13.5V

-50

-75

µA

tCP

Charging time 2)

VCP= VVS + 8V

VVS = 13.5V

CCP = 10nF

1.2

4

ms

fCP

Charge pump frequency

VVS = 13.5V

250

500

750

kHz

Drivers for external highside power MOS

VCB1

VCB2

Bootstrap voltage

VVS = 8V; ICBX = 0; VSX = 0

VVS =13.5V; ICBX = 0; VSX = 0

VVS = 20V; ICBX = 0; VSX = 0

7.5

10

10

14

14

14

V

V

V

RGH1L

RGH2L

ON-resistance of SINK stage

VCBX = 8V; VSX = 0

IGHX = 50mA; TJ = 25°C

10



VCBX = 8V; VSX = 0

IGHX = 50mA; TJ = 125°C

20



RGH1H

RGH2H

ON-resistance of SOURCE stage

IGHX = -50mA; TJ = 25°C

IGHX = -50mA; TJ = 125°C

10

20





VGH1H

VGH2H

Gate ON voltage (SOURCE)

VVS= VSX = 8V; IGHX = 0;

CCBX = 0.1µF

VVS

+6.5V

VVS

+14V

VVS = VSX = 13.5V; IGHX = 0;

CCBX = 0.1µF

VVS

+10V

VVS

+14V

VVS = VSX = 20V; IGHX = 0;

CCBX = 0.1µF

VVS

+10V

VVS

+14V

RGH1

RGH2

Gate discharge resistance

EN = LOW

10

100

k



RS1

RS2

Sink resistance

10

100

k



Drivers for external lowside power MOS

RGL1L

RGL2L

ON-resistance of SINK stage

IGLX = 50mA; TJ = 25°C

IGLX = 50mA; TJ = 125°C

10

20





RGL1H,

RGL2H

ON-resistance of SOURCE stage

IGLX = -50mA; TJ = 25°C

IGLX = -50mA; TJ = 125°C

10

20





VGL1H,

VGL2H

Gate ON voltage (SOURCE)

VVS = 8V; IGLX = 0

VVS = 13.5V; IGLX = 0

VVS = 20V; IGLX = 0

7V

10V

10V

VVS

VVS

14V

RGL1

RGL2

Gate discharge resistance

EN = LOW

10

100

k



2. not tested in production: guaranteed by design and verified in characterization

Timing of the drivers

tGH1LH

tGH2LH

Propagation delay time

Fig. 2

VVS = 13.5V

VS1 = VS2 =0

CCBX = 0.1µF

RPR= 10kW

500

ns

Table 5. Electrical Characteristcs (continued)

(8V < VVS < 20V, VEN = HIGH, -40°C  TJ  150°C, unless otherwise specified. The voltages are refered to

GND and currents are assumed positive, when current flows into the pin

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit