5.4 Thermal Information

THERMAL METRIC (1)

ISO776x

UNIT

DW (SOIC)

DBQ (SSOP)

16 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

60.3

86.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

24.0

26.9

°C/W

RθJB

Junction-to-board thermal resistance

29.3

36.6

°C/W

ψJT

Junction-to-top characterization parameter

3.3

1.7

°C/W

ψJB

Junction-to-board characterization parameter

28.7

36.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.5 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ISO7760

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 50-MHz 50% duty cycle

square wave

314

mW

PD1

Maximum power dissipation (side-1)

55

mW

PD2

Maximum power dissipation (side-2)

259

mW

ISO7761

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 50-MHz 50% duty cycle

square wave

314

mW

PD1

Maximum power dissipation (side-1)

88

mW

PD2

Maximum power dissipation (side-2)

226

mW

ISO7762

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 50-MHz 50% duty cycle

square wave

314

mW

PD1

Maximum power dissipation (side-1)

122

mW

PD2

Maximum power dissipation (side-2)

192

mW

ISO7763

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 50-MHz 50% duty cycle

square wave

314

mW

PD1

Maximum power dissipation (side-1)

157

mW

PD2

Maximum power dissipation (side-2)

157

mW

ISO7760, ISO7761, ISO7762, ISO7763

SLLSER1H – AUGUST 2017 – REVISED JANUARY 2024

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Product Folder Links: ISO7760 ISO7761 ISO7762 ISO7763