5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

V+

Supply voltage(2)

–0.3

5.5

V

VID

Differential input voltage(3)

±5.5

V

VI

Input voltage (either input)

–0.3

5.5

V

VO

Output voltage

–0.3

VCC + 0.3

V

TJ

Operating virtual junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

All voltage values (except differential voltages) are with respect to the network GND.

(3)

Differential voltages are at IN+ with respect to IN−.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±750

(1)

JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

MIN

MAX

UNIT

V+

Supply voltage (single-supply operation)

2.5

5.5

V

TA

Operating free-air temperature

–40

125

°C

5.4 Thermal Information

THERMAL METRIC(1)

LMV342

LMV344

LMV341

LMV342

LMV344

UNIT

D (SOIC)

DBV

(SOT-23)

DCK

(SC70)

DGK

(VSSOP)

PW

(TSSOP)

8 PINS

14 PINS

6 PINS

6 PINS

8 PINS

14 PINS

RθJA

Junction-to-ambient thermal resistance(2) (3)

123.9

88.7

193.4

196.8

192.3

118

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

70.2

49

145.6

82.4

78.2

46.9

°C/W

RθJB

Junction-to-board thermal resistance

64.1

43

44.1

95.2

112.6

59.7

°C/W

ψJT

Junction-to-top characterization parameter

25

16.9

34.1

1.8

15.2

5.1

°C/W

ψJB

Junction-to-board characterization parameter

63.6

42.7

43.4

93.2

111.2

59.1

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

Maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any allowable

ambient temperature is PD = (TJ(max) – TA)/RθJA. Operating at the absolute maximum TJ of 150°C can affect reliability.

(3)

The package thermal impedance is calculated in accordance with JESD 51-7.

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LMV341, LMV342, LMV344

SLOS447J – SEPTEMBER 2004 – REVISED JUNE 2025

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