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ESDA25DB3 数据表(PDF) 2 Page - STMicroelectronics |
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ESDA25DB3 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient C Capacitance Rd Dynamic resistance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) Symbol Parameter Value Unit VPP Electrostatic discharge MIL STD 883C - Method 3015-6 25 kV PPP Peak pulse power (8/20 µs) 500 W Tstg Tj Storage temperature range Maximum junction temperature - 55 to + 150 125 °C °C TL Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C) Types VBR @ IR IRM @VRM Rd αTC min. max. max. typ. max. typ. note1 note1 note 2 note 3 0V bias VV mA µAV Ω 10 -4/ °CpF ESDA25DB3 25 30 1 2 24 0.5 9.7 50 note 1 : Betwenn any I/O pin Groung note 2 : Square pulse, Ipp = 25A, tp=2.5 µs. note 3 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C) ® ESDA25DB3 2/5 |
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