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ESDA25DB3 数据表(PDF) 4 Page - STMicroelectronics |
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ESDA25DB3 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 5 page ![]() 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ppp[Tj initial]/Ppp[Tj initial=25 °C] Tj initial( °C) Fig. 1 : Peak power dissipation versus initial junction tempearature. 20 25 30 35 40 45 50 55 60 0.1 1.0 10.0 50.0 Ipp(A) tp=2.5 µs V (V) CL Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs. 1 10 100 100 1000 5000 Ppp(W) tp( µs) Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25 °C). 12 5 10 30 10 20 50 100 C(pF) F=1MHz Vosc=30mV V (V) R Fig. 4 : Capacitance versus reverse applied voltage (typical values). 25 50 75 100 125 1 10 100 200 I [Tj] / I [Tj=25 °C] RR Tj( °C) Fig. 5 : Relative variation of leakagecurrent versus junction temperature (typical values). ® ESDA25DB3 4/5 |
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