1

Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

40

V

IF(AV)

Average forward current, δ = 0.5

square wave

Tc = 135 °C(1)

Per diode

5

A

Per device

10

PARM

Repetitive avalanche power

tp = 10 µs

Tj = 125 °C

165

W

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

120

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(2)

+150

°C

1. Value based on Rth(j-c)(max.).

2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Typ.

value

Unit

Rth(j-c)

Junction to case, per device

PSMC (TO-277)

1.0

°C/W

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

125

µA

Tj = 125 °C

-

30

50

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.495

V

Tj = 125 °C

-

0.370 0.430

Tj = 25 °C

IF = 10 A

-

0.600

Tj = 125 °C

-

0.505 0.590

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.25 x IF(AV) + 0.036 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS10L40CSF

Characteristics

DS13739 - Rev 1

page 2/9