1.1

Characteristics (curves)

Figure 1. Average forward current versus case

temperature (δ = 0.5, per diode)

0

5

10

15

20

25

0

25

50

75

100

125

150

Tc(°C)

IF(AV)(A)

T

δ=tp/T

tp

Figure 2. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tP(s)

Zth(j-c) /Rth(j-c)

Single pulse

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

35

40

VR(V)

I

R(mA)

Tj = 25 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 125 °C

Figure 4. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

1000

1

10

100

C(pF)

F = 1 MHz

OSC = 30 mVRMS

Tj = 25 °C

V

VR(V)

Figure 5. Forward voltage drop versus forward current

(typical values, per diode)

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

VF(V)

IF(A)

Tj = 125 °C

Tj = 75 °C

Tj = 150 °C

Tj = 25 °C

Figure 6. Thermal resistance junction to ambient versus

copper surface under tab (typical values, epoxy printed

board FR4, eCu= 70 µm)

0

20

40

60

80

100

120

0

1

2

3

4

5

6

7

8

9

10

SCu(cm²)

Rth(j-a) (°C/W)

PSMC (TO-277A)

Epoxy printed board FR4, copper thickness: 70 μm

STPS10L40CSF

Characteristics (curves)

DS13739 - Rev 1

page 3/9