1

Characteristics

Table 1. Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

30

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward current, δ = 0.5

square wave

Tc = 140 °C

Per diode

7.5

A

Tc = 135 °C

Per device

15

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

75

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

200

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

+150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max.

Unit

Rth(j-c)

Junction to case

Per diode

2.5

°C/W

Per device

1.6

Rth(c)

Coupling

0.7

When the diodes 1 and 2 are used simultaneously :

Δ Tj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

For more information, please refer to the following application note :

•

AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = 30 V

-

1

mA

Tj = 125 °C

-

70

140

mA

VF(1)

Forward voltage drop

Tj = 25 °C

IF = 7.5 A

-

0.48

V

Tj = 125 °C

-

0.34

0.39

Tj = 25 °C

IF = 15 A

-

0.57

Tj = 125 °C

-

0.44

0.51

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.27 x IF(AV) + 0.016 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses in a power diode

STPS15L30CDJF

Characteristics

DS6250 - Rev 5

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