1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

PF(AV)(W)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

1

2

3

4

6

5

7

9

8

10

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

T

tp

δ=tp/T

IF(AV)(A )

Figure 2. Average forward current versus ambient

temperature (δ = 0.5, per diode)

IF(AV)(A)

0

1

2

3

4

5

6

7

8

9

0

25

50

75

100

125

150

T

δ=tp/T

tp

Tamb(°C)

Rth(j-a) = Rth(j-c)

Figure 3. Normalized avalanche power derating versus

pulse duration

P

(10 µs)

ARM

P

( p

t )

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration

Zth (j-c)/Rth (j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

E-02

1.

1.E-01

1.E+00

Single pulse

tp (s )

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

IR(mA)

1.E-02

1.E-01

E+00

1.

1.E+01

1.E+02

1.E+03

0

5

10

15

20

25

30

TC = 150 °C

VR(V)

TC = 125 °C

TC = 100 °C

TC = 75 °C

TC = 50 °C

TC = 25 °C

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

1000

1

10

100

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

VR(V)

C(pF)

STPS15L30CDJF

Characteristics (curves)

DS6250 - Rev 5

page 3/9