Figure 7. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

Z

/R

th(j-a)

th(j-a)

t (s)

p

Figure 8. Relative variation of thermal impedance junction

to ambient versus pulse duration (DO-201AD)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

Z

/R

th(j-a)

th(j-a)

t (s)

p

Figure 9. Relative variation of thermal impedance junction

to ambient versus pulse duration (DO-15)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

Z

/R

th(j-a)

th(j-a)

t (s)

p

Figure 10. Reverse leakage current versus reverse

voltage applied (typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

35

40

45

50

55

60

Tj=125°C

Tj=25°C

Tj=100°C

V (V)

R

I (mA)

R

Figure 11. Junction capacitance versus reverse voltage

applied (typical values)

10

100

1000

1

1 0

100

F=1MHz

Vosc=30mV

Tj=25°C

V (V)

R

C(pF)

Figure 12. Forward voltage drop versus forward current

(high level)

0

5

10

15

20

25

30

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Tj=25°C

(Maximum values)

Tj=100°C

(Maximum values)

Tj=100°C

(Maximum values)

Tj=100°C

(Typical v alues)

Tj=100°C

(Typical v alues)

I

(A)

FM

V

(V)

FM

STPS3L60

Characteristics (curves)

DS2134 - Rev 7

page 5/17