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STPS3L60 数据表(PDF) 4 Page - STMicroelectronics |
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STPS3L60 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 17 page ![]() 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current P (W) F(AV) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 T δ=tp/T tp I (A) F(AV) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 Figure 2. Average forward current versus ambient temperature (δ = 0.5) (SMB Flat, SMB Flat Notch) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 5 5 0 75 100 125 150 Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W I (A) F(AV) T (°C) amb Figure 3. Average forward current versus ambient temperature (δ = 0.5) (DO-201AD, SMB) I (A) F(AV) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 5 5 0 75 100 125 150 R =80°C/W th(j-a) R = R th(j-a) th(j-I) T (°C) amb Figure 4. Average forward current versus ambient temperature (δ = 0.5) (DO-15) I (A) F(AV) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 5 5 0 75 100 125 150 Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W T (°C) amb Figure 5. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) P (tp) P (10 µs) ARM ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p Figure 6. Relative variation of thermal impedance junction to lead versus pulse duration (SMB Flat, SMB Flat Notch) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse Z /R th(j-l) th(j-l) t (s) p STPS3L60 Characteristics (curves) DS2134 - Rev 7 page 4/17 |
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