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IS25LE512M-RGLA3:P-TY 数据表(PDF) 18 Page - Integrated Silicon Solution, Inc

部件名 IS25LE512M-RGLA3:P-TY
功能描述  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RGLA3:P-TY 数据表(HTML) 18 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
18
Rev. A6
06/16/2025
Table 5.4 JEDEC
Basic Flash Parameter Table (Continued)
Description
Address
(Byte)
Address
(Bit)
Data
Supports (2-2-2) Fast Read
40h
0
0b
Reserved
3:1
111b
Supports (4-4-4) Fast Read
4
1b
Reserved
7:5
111b
Reserved
43:41h
31:8
FFFFFFh
Reserved
45:44h
15:0
FFFFh
2-2-2 Fast Read Wait Cycle Count
46h
20:16
00000b
2-2-2 Fast Read Mode bit Cycle Count
23:21
000b
2-2-2 Fast Read Instruction
47h
31:24
FFh
Reserved
49:48h
15:0
FFFFh
4-4-4 Fast Read Wait Cycle Count
4Ah
20:16
00100b
4-4-4 Fast Read Mode bit Cycle Count
23:21
010b
4-4-4 Fast Read Instruction
4Bh
31:24
EBh
Erase Type 1 Size (4KB)
4Ch
7:0
0Ch
Erase Type 1 Instruction
4Dh
15:8
20h
Erase Type 2 Size (32KB)
4Eh
23:16
0Fh
Erase Type 2 Instruction
4Fh
31:24
52h
Erase Type 3 Size (64KB)
50h
7:0
10h(00h(1))
Erase Type 3 Instruction
51h
15:8
D8h(FFh(1))
Erase Type 4 Size (256KB)
52h
23:16
00h(12h(1))
Erase Type 4 Instruction
53h
31:24
FFh(D8h(1))
Multiplier from typical erase time to maximum erase time
57:54h
3:0
0010b
Sector Type 1 ERASE time (typ)
8:4
00110b
10:9
01b
Sector Type 2 ERASE time (typ)
15:11
01000b
17:16
01b
Sector Type 3 ERASE time (typ)
22:18
01010b
(00000b(1))
24:23
01b(00b(1))
Sector Type 4 ERASE time (typ)
29:25
00000b
(00101b(1))
31:30
00b(10b(1))
Note:
1.
Only for option K (256KB Block Size instead of 64KB)



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