Characteristics

STPS30L60C

2/13

Doc ID 6479 Rev 10

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

ΔT

j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

60

V

IF(RMS) Forward rms current

30

A

IF(AV)

Average forward current

TO-220AB narrow leads,

TO-220AB, I2PAK, D2PAK,

TO-247,

δ = 0.5

Tc = 130 °C

Per diode

Per device

15

30

A

TO-220FPAB,

δ = 0.5

Tc = 110 °C

Per diode

Per device

15

30

IFSM

Surge non repetitive forward current

tp = 10 ms, sinusoidal

230

A

IRRM

Repetitive peak reverse current

tp = 2 µs square, F = 1

kHz

2A

PARM

(1)

Repetitive peak avalanche power

tp = 1 µs, Tj = 25 °C

7800

W

VARM

(2)

Maximum repetitive peak avalanche voltage

tp < 1 µs, Tj < 150 °C,

IAR < 29 A

80

V

VASM

(2)

Maximum single pulse peak avalanche voltage

tp < 1 µs, Tj < 150 °C,

IAR < 29 A

80

V

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature(3)

150

°C

dV/dt

Critical rate of rise reverse voltage

10000

V/µs

1.

For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche

energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

Refer to Figure 12.

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB narrow leads,

TO-220AB, I2PAK, D2PAK, TO-247

Per diode

1.5

°C/W

Total

0.8

TO-220FPAB

Per diode

4.7

Total

3.95

Rth(c)

Coupling

TO-220AB narrow leads, TO-220AB, I2PAK,

D2PAK, TO-247

0.1

TO-220FPAB

3.2