STPS30L60C

Characteristics

Doc ID 6479 Rev 10

3/13

To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.009x IF

2

(RMS)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

480

µA

Tj = 125 °C

77

130

mA

VF

(1)

Forward voltage drop

Tj = 25 °C

IF = 15 A

0.6

V

Tj = 125 °C

IF = 15 A

0.5

0.56

Tj = 25 °C

IF = 30 A

0.75

Tj = 125 °C

IF = 30 A

0.65

0.7

1.

Pulse test: tp = 380 µs,

δ < 2%

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

0

2

4

6

8

101214

161820

0

2

4

6

8

10

12

P

(W)

F(av)

T

δ=tp/T

tp

I

(A)

F(av)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

0

2

4

6

8

10

12

14

16

18

0

25

50

75

100

125

150

R

th(j-a)=Rth(j-c)

R

th(j-a)=15 °C/W

T

δ=tp/T

tp

TO-220FPAB

I

(A)

F(av)

T

(°C)

amb

TO-220AB, TO-220AB narrow leads, I2PAK, D2PAK, TO-247

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(tp)

P

(1 µs)

ARM

ARM

0

0.2

0.4

0.6

0.8

1

1.2

25

50

75

100

125

150

T (°C)

j

P(Tj)

P

(25 °C)

ARM

ARM