1

Characteristics

Table 1. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS) Forward rms current

30

A

IF(AV)

Average forward current δ = 0.5, square

wave

TO-220AB, D2PAK, I2PAK TC = 160 °C

Per diode

10

A

Per device

20

TO-220FPAB

TC = 145 °C Per diode

10

TC = 125 °C Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

250

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj= 125 °C

775

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature (1)

+ 175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB, D2PAK, I2PAK

Per diode

1.6

°C/W

TO-220FPAB

4

TO-220AB, D2PAK, I2PAK

Total

0.9

TO-220FPAB

3.2

Rth(c)

Coupling

TO-220AB, D2PAK, I2PAK

-

0.15

°C/W

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

4.5

µA

Tj = 125 °C

-

2

6

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

0.77

V

IF = 20 A

-

0.88

Tj = 125 °C

IF = 10 A

-

0.59

0.64

IF = 20 A

-

0.67

0.73

STPS20H100C

Characteristics

DS1216 - Rev 10

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