1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

P

(W)

F(AV)

0

2

4

6

8

10

12

0

2

4

6

8

T

δ=tp/T

tp

I

(A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

Figure 2. Average forward current versus ambient

temperature (δ = 0.5, per diode)

I

(A)

F(AV)

0

25

50

75

100

125

150

175

0

2

4

6

8

10

12

TO-220FPAB

TO-220AB

R

=R

th(j-a)

th(j-c)

R

=15°C/W

th(j-a)

R

=40°C/W

th(j-a)

T

(°C)

amb

T

δ=tp/T

tp

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

P

(tp)

P

(10 µs)

ARM

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration

Z

/R

th(j-c)

th(j-c)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

t (s)

p

Single pulse

TO-220AB, D PAK, I PAK

2

2

Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Z

/R

th(j-c)

th(j-c)

t (s)

p

Single pulse

TO-220FPAB

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

I (µA)

R

0

10

20

30

40

50

60

70

80

90

100

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

V (V)

R

T =125°C

j

T =150°C

j

T =100°C

j

T =25°C

j

STPS20H100C

Characteristics (curves)

DS1216 - Rev 10

page 4/18