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STPS1150 数据表(PDF) 3 Page - STMicroelectronics |
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STPS1150 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current P (W) F(AV) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I (A) F(AV) T δ =tp/T tp δ =1 δ =0.5 δ =0.05 δ =0.1 δ =0.2 Figure 2. Average forward current versus ambient temperature (δ = 0.5) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 175 I (A) F(AV) Rth(j-a) = Rth(j-l) Rth(j-a) = 120 °C/W T =tp/T tp δ T (°C) amb SMA / DO-41 Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) P (tp) P (10 µs) ARM ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration (SMA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 SMA Z /R th(j-a) th(j-a) Single pulse t ( s) p STPS1150 Characteristics (curves) DS3281 - Rev 8 page 3/13 |
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