Figure 5. Relative variation of thermal impedance junction

to ambient versus pulse duration (DO-41)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z

/R

th(j-a)

th(j-a)

t (s)

p

DO-41

Single pulse

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values)

I (µA)

R

1.E- 03

1.E- 02

1.E- 01

1.E+ 00

1.E+ 01

1.E+ 02

1.E+ 03

1.E+ 04

0

25

50

75

100

125

150

T =125°C

j

T =150°C

j

T =100°C

j

T =50°C

j

T =25°C

j

T =75°C

j

V ( V)

R

Figure 7. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

1

10

100

1

1 0

100

1000

F = 1 MHz

V

= 30mV

T = 25 °C

OSC

RMS

j

V (V)

R

Figure 8. Forward voltage drop versus forward current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0 .1

0.2

0 .3

0.4

0 .5

0.6

0 .7

0.8

0 .9

1.0

T= 125°C

(maximum values)

j

T= 125°C

(typical values)

j

T= 25°C

(maximum values)

j

IF(A)

VF(V)

Figure 9. Thermal resistance junction to ambient versus

copper surface under each lead (SMA)

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

SCu(cm²)

Rth(j-a) (°C/W)

Epoxy printed circuit copper thickness = 35 µm

Figure 10. Thermal resistance versus lead length (DO-41)

Rth(°C/W)

0

20

40

60

80

100

120

5

10

15

25

Lleads(mm)

Rth(j-I)

Rth(j-a)

20

STPS1150

Characteristics (curves)

DS3281 - Rev 8

page 4/13