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TLV751 数据表(PDF) 18 Page - Texas Instruments

部件名 TLV751
功能描述  TLV751 Dual, 500-mA, High-Accuracy, LDO in a Small-Size Package
PDF  31 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

TLV751 数据表(HTML) 18 Page - Texas Instruments

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Output Voltage in
normal regulation
Dropout
VOUT = VIN - VDO
Transient response
time of the LDO
Load current
discharges
output
voltage
Time
VGS voltage for
normal operation
VGS voltage in
dropout (pass device
fully on)
VDO
Gate Voltage
Input Voltage
VGS voltage for
normal operation
Input Voltage
Output Voltage
VGS voltage
(pass device
fully off)
18
TLV751
SBVS385B – DECEMBER 2019 – REVISED APRIL 2020
www.ti.com
Product Folder Links: TLV751
Submit Documentation Feedback
Copyright © 2019–2020, Texas Instruments Incorporated
Application Information (continued)
Figure 40. Line Transients From Dropout
8.1.5 Reverse Current
As with most LDOs, excessive reverse current can damage this device.
Reverse current flows through the body diode on the pass element instead of the normal conducting channel. At
high magnitudes, this current flow degrades the long-term reliability of the device, as a result of one of the
following conditions:
Degradation caused by electromigration
Excessive heat dissipation
Potential for a latch-up condition
Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute
maximum rating of VOUT > VIN + 0.3 V:
If the device has a large COUT and the input supply collapses with little or no load current
The output is biased when the input supply is not established
The output is biased above the input supply



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