Characteristics

STPS30150C

2/16

DocID7757 Rev 9

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbo

l

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

150

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward

current δ = 0.5,

square wave

TO-220FPAB

TC = 120 °C

Per diode

15

A

TC = 90 °C

Per device

30

TO-220AB,

D2PAK, TO-247

TC = 155 °C

Per diode

15

TC = 150 °C

Per device

30

IFSM

Surge non

repetitive forward

current

tp = 10 ms sinusoidal

220

A

PARM

Repetitive peak

avalanche power

tp = 10 µs, Tj = 125 °C

750

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

+175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameter

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AB, D2PAK

Per diode

1.6

°C/W

TO-220FPAB

4

TO-247

1.5

TO-220AB, D2PAK

Total

0.85

TO-220FPAB

3.3

TO-247

0.8

Rth(c)

Coupling

TO-220AB, D2PAK, TO-247

-

0.1

°C/W

TO-220FPAB

2.6

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)