STPS30150CT datasheet(4/16 Pages) STMICROELECTRONICS

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Characteristics

STPS30150C

4/16

DocID7757 Rev 9

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration (TO-220AB,

D²PAK, TO-247)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration (TO-

220FPAB)

Figure 6: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

δ = 0.05

δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

δ=tp/T

(W)

F(AV)

(A)

F(AV)

100

125

150

175

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

TO-220FP

TO-220AB / TO-247 / D PAK

δ=tp/T

(A)

F(AV)

(°C)

amb

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

th(j-c)

t (s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-0 3

1.E-0 2

1.E-0 1

1.E+0 0

1.E+01

t (s)

th(j-c )

th(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

100

125

150

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

Tj=125°C

Tj=25°C

Tj=150°C

Tj=100°C

Tj=175°C

I (µA)

V (V)

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