TL082ACDR datasheet(28/78 Pages) TI2

28 / 78 page

9 Device and Documentation Support

9.1 Device Support

9.1.1 Device Nomenclature

Table 9-1. Device Nomenclature

PART NUMBER

DEFINITION

TL08xyzzzzzz

x is the channel count

If y = H, the die is manufactured on the latest flow (CSO: RFB).

Section 5.7 and Section 5.10 describe the performance of the new die.

If y ≠ H and y ≠ M, the die is manufactured on the legacy flow (CSO: SFAB) or the latest flow (CSO: RFB).

Section 5.8 and Section 5.9 describe the performance of the original die.

If y = M, the device is specified for the extended temperature range of –55°C to +125°C. The die is

manufactured on the legacy flow (CSO:SFAB).

The letters and numbers represented by z are grade-out and package options described in Section 5.8 and

the Package Option Addendum at the end of this data sheet.

9.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Notifications to register and receive a weekly digest of any product information that has changed. For change

details, review the revision history included in any revised document.

9.3 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

9.4 Trademarks

TI E2E™ is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

9.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

9.6 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

10 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision N (June 2024) to Revision O (September 2025)

Page

• Changed Vn = 18nV/√Hz to Vn = 37nV/√Hz in Features ................................................................................... 1

• Updated Device Information table...................................................................................................................... 1

• Changed TL081 to TL081 SOIC only in figure1 and TL081 (Each Amplifier) in figure2 of Logic Symbols ....... 1

• Updated pin name from V– to VCC– and V+ to VCC+ in Figure 4-1 and Figure 4-2......................................... 3

• Updated caption for Figure 4-3...........................................................................................................................3

• Updated caption for Figure 4-4...........................................................................................................................3

TL081, TL081A, TL081B, TL081H

TL082, TL082A, TL082B, TL082H

TL084, TL084A, TL084B, TL084H

SLOS081O – FEBRUARY 1977 – REVISED SEPTEMBER 2025

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Product Folder Links: TL081 TL081A TL081B TL081H TL082 TL082A TL082B TL082H TL084 TL084A TL084B TL084H

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