Figure 7. Reverse recovery charges versus dIF/dt (typical

values)

0

10

20

30

40

50

60

0

100

200

300

400

500

QRR(nC)

dIF/dt(A/µs)

V

R = 160 V

T

j = 125 °C

I

F = IF(AV)

Figure 8. Reverse recovery time versus dIF/dt (typical

values)

0

10

20

30

40

50

60

0

100

200

300

400

500

trr (nC)

dIF/dt(A/µs)

V

R = 160 V

T

j = 125 °C

I

F = IF(AV)

Figure 9. Peak reverse recovery current versus dIF/dt

(typical values)

0

1

2

3

4

5

6

0

100

200

300

400

500

I

RM(A)

V

R = 160 V

T

j = 125 °C

I

F = IF(AV)

dIF/dt(A/µs)

Figure 10. Relative variations of dynamic parameters

versus junction temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25

50

75

100

125

150

V

R = 160 V

I

F = IF(AV)

Reference: T

j = 125 °C

I

RM

Q

RR

Figure 11. Thermal resistance junction to ambient versus copper surface under each lead (typical values)

0

30

60

90

120

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

SCU(cm²)

Epoxy printed circuit board, copper thickness = 70 µm

Rth(j-a)(°C/W)

SMB

STTH2R02-Y

Characteristics (curves)

DS6945 - Rev 3

page 5/10