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STTH2R02-Y 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH2R02-Y
功能描述  Automotive 200 V, 2 A ultrafast recovery diode
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH2R02-Y 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
200
V
IFRM
Repetitive peak forward current
tp = 5 μs, f = 5 kHz
60
A
IF(RMS)
Forward rms current
60
A
IF(AV)
Average forward current δ = 0.5, square wave
TL = 90 °C
2
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range (1)
-40 to +175
°C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter
Max. value
Unit
Rth(j-l)
Junction to lead
30
°C/W
For more information, please refer to the following application note :
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
3
µA
Tj = 125 °C
-
2
20
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 6 A
-
1.20
V
Tj = 25 °C
IF = 2 A
-
0.89
1.00
Tj = 100 °C
-
0.76
0.85
Tj = 150 °C
-
0.70
0.80
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.68 x IF(AV) + 0.06 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
AN604: Calculation of conduction losses in a power rectifier
AN4021: Calculation of reverse losses on a power diode
STTH2R02-Y
Characteristics
DS6945 - Rev 3
page 2/10



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