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STTH112-Y 数据表(PDF) 2 Page - STMicroelectronics |
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STTH112-Y 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at Tj= 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage, Tj = -40 °C to +175 °C 1200 V IF(AV) Average forward current TL = 135 °C δ = 0.5 1 A IFSM Forward surge current tp = 8.3 ms 18 A Tstg Storage temperature range -65 to + 175 °C Tj(1) Operating temperature range -40 to + 175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance Symbol Parameter Value Unit Rth(j-l) Junction to lead 20 °C/W For more information, you can refer to the following application note related to the thermal management: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristic Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 5 µA Tj = 125 °C - 1 50 VF(2) Forward voltage drop Tj = 25 °C IF = 1 A - 1.9 V Tj = 150 °C - 1.10 1.55 1. Pulsetest: tp = 5 ms, δ < 2% 2. Pulsetest: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.25 x IF(AV) + 0.330 IF²(RMS) For more information, you can refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 0.5 A; Irr = 0.25 A; IR = 1 A - 53 75 ns tfr Forward recovery time Tj = 25 °C IF = 1 A; dIF/dt = 50 A/µs; VFR = 4.50 V - 500 VFP Forward recovery voltage - 20 30 V STTH112-Y Characteristics DS10171 - Rev 3 page 2/8 |
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