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STTH112-Y 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH112-Y
功能描述  Automotive 1 A - 1200 V ultrafast rectifier
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH112-Y 数据表(HTML) 3 Page - STMicroelectronics

  STTH112-Y Datasheet HTML 1Page - STMicroelectronics STTH112-Y Datasheet HTML 2Page - STMicroelectronics STTH112-Y Datasheet HTML 3Page - STMicroelectronics STTH112-Y Datasheet HTML 4Page - STMicroelectronics STTH112-Y Datasheet HTML 5Page - STMicroelectronics STTH112-Y Datasheet HTML 6Page - STMicroelectronics STTH112-Y Datasheet HTML 7Page - STMicroelectronics STTH112-Y Datasheet HTML 8Page - STMicroelectronics  
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1.1
Electrical characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
PF(AV)(W)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
tp
δ=tp/T
IF(AV)(A)
Figure 2. Forward voltage drop versus forward current
(typical values)
IF(A)
0.01
0.10
1.00
10.00
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Tj = 150 °C
VF(V)
Tj = 25 °C
Figure 3. Forward voltage drop versus forward current
(maximum values)
0.01
0.10
1.00
10.00
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
IF(A)
Tj = 150 °C
VF(V)
Tj = 25 °C
Figure 4. Relative variation of thermal impedance junction
to lead versus pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1. E-04
1. E-03
1. E-02
1. E-01
1. E+00
1. E+01
Single pulse
SMBflat
tp(s)
Zth(j-l)/Rth(j-l)
Figure 5. Junction capacitance versus reverse voltage
applied (typical values)
C (pF)
1
10
100
1
10
100
1000
10000
VR(V)
MHz
= 1
F
VOSC = 30 mVRMS
Tj = 25 °C
Figure 6. Thermal resistance junction to ambient versus
copper surface under each lead
0
30
60
90
120
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Rth(j-a)(°C/W)
SMB-Flat
SCu(cm²)
Epoxy printed board FR4, copper thickness: 70 μm
STTH112-Y
Characteristics
DS10171 - Rev 3
page 3/8



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