1

Characteristics

Table 1. Absolute ratings (limiting values at Tj= 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1000

V

IF(AV)

Average forward

current

TL=140 °C δ = 0.5

1

A

IFSM

Forward surge current

tp= 8.3 ms

20

A

Tstg

Storage temperature range

-65to + 175

°C

Tj(1)

Operating temperature range

-40to + 175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

20

°C/W

Table 3. Static electrical characteristic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj= 25 °C

VR=VRRM

-

5

µA

Tj= 125 °C

-

1

50

VF(2)

Forward voltage drop

Tj= 25 °C

IF=1 A

-

1.7

V

Tj= 150 °C

-

0.98

1.42

1. Pulsetest: tp = 5 ms, δ < 2%

2. Pulsetest: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.20 x IF(AV) + 0.225 IF²(RMS)

Table 4. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj= 25 °C

IF=0.5 A; Irr =0.25 A; IR=1 A

-

52

75

ns

tfr

Forward recovery time

Tj= 25 °C

IF=1 A; dIF/dt= 50 A/µs; VFR=2.70 V

-

300

VFP

Forward recovery voltage

-

10

15

V

STTH110-Y

Characteristics

DS10077 - Rev 2

page 2/8