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STTH110-Y 数据表(PDF) 3 Page - STMicroelectronics |
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STTH110-Y 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 1.1 Electrical characteristics (curves) Figure 1. Average forward power dissipation versus average forward current 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 T δ =tp/T tp I (A) F(AV) P (W) F(AV) Figure 2. Forward voltage drop versus forward current (typical values) 0.01 0.10 1.00 10.00 0.0 0.4 0.8 1.2 1.6 2.0 2.4 I (A) F T = 25°C j T = 150°C j V (V) F Figure 3. Forward voltage drop versus forward current (maximum values) 0.01 0.10 1.00 10.00 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 I (A) F T = 150°C j T = 25°C j V (V) F Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration Z /R th(j- ) th(j- ) l l 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Single pulse SMBflat t (s) p Figure 5. Junction capacitance versus reverse voltage applied (typical values) 1 10 100 1 10 100 1000 C (pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C V (V) R Figure 6. Thermal resistance junction to ambient versus copper surface under each lead R (°C/W) th(j-a) 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 6 7 8 9 10 epoxy printed circuit board FR4, copper thickness: 35 µm S (cm²) cu STTH110-Y Electrical characteristics (curves) DS10077 - Rev 2 page 3/8 |
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