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ADRF5238BCRZN-R7 数据表(PDF) 5 Page - Analog Devices |
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ADRF5238BCRZN-R7 数据表(HTML) 5 Page - Analog Devices |
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5 / 13 page ![]() Data Sheet ADRF5238 SPECIFICATIONS analog.com Rev. 0 | 5 of 13 Table 2. Electrical Characteristics for VDD = 3.3V (Continued) Parameter Symbol Test Conditions/Comments Min Typ Max Unit Current Low IINL VEN and VCTRL = 0V, VDD = 3.3V <1 µA High IINH VCTRL = 3.3V, VDD = 3.3V <1 µA VEN = 3.3V, VDD = 3.3V <7 µA RECOMMENDED OPERATING CONDITONS Supply Voltage VDD 3.15 3.3 3.45 V RF Input Power 2 PIN f = 100MHz to 10GHz, TCASE = 85°C3 Through Path RF signal is applied to RFC or through connected RF throw port (selected RFx) Average 33 dBm Peak4 33 dBm Terminated Path RF signal is applied to the unselected RFx port Average 26 dBm Peak 28.5 dBm Hot Switching (RFC) RF signal is applied to RFC while switching between RFx ports Average 31 dBm Peak 31 dBm Hot Switching (RFx) RF signal is applied to RFx port while switching Average 26 dBm Peak 28.5 dBm Case Temperature TCASE −40 +105 °C 1 For input linearity performance over frequency, see Figure 13 to Figure 16. 2 For power derating over frequency, see the Power Derating Curves section. 3 For 105°C operation, the average power handling degrades 3dB, and the peak power handling degrades 1dB from the TCASE = 85°C specifications. 4 Peak: ( ≤100 ns pulse duration, 5% duty cycle). |
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