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MMBT200. 数据表(PDF) 4 Page - ON Semiconductor |
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MMBT200. 数据表(HTML) 4 Page - ON Semiconductor |
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4 / 7 page ![]() Typical Performance Characteristics (Continued) Figure 9. Collector Saturation Region Figure 10. Input and Output Capacitance vs. Reverse Voltage Figure 11. Gain Bandwidth Product vs. Collector Current Figure 12. Switching Times vs. Collector Current Figure 13. Power Dissipation vs. Ambient Temperature β 100 300 700 2000 4000 0 1 2 3 4 I - BASE CURRENT (uA) B 50 mA 300 mA 100 uA Ta = 25°C Ic = β 0.1 1 10 100 10 100 V - COLLECTOR VOLTAGE (V) Cib Cob f = 1.0 MHz CE β 110 20 50 100 150 0 10 20 30 40 I - COLLECTOR CURRENT (mA) C V = 5V ce β 10 20 30 50 100 200 300 0 30 60 90 120 150 180 210 240 270 300 I - COLLECTOR CURRENT (mA) IB1 = IB2 = Ic / 10 V = 10 V C cc t s t d t f t r β 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 TEMPER ATURE ( C) ° TO-92 SOT-23 www.onsemi.com 4 |
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