Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width

≤ 300 μs, duty cycle ≤ 2.0%.

Symbol

Parameter

Max.

Unit

PN200A(3)

MMBT200(4)

PD

Total Device Dissipation

625

350

mW

Derate Above 25

°C5.0

2.8

mW/

°C

RθJC

Thermal Resistance, Junction to Case

83.3

°C/W

RθJA

Thermal Resistance, Junction to Ambient

200

357

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

Off Characteristics

BVCBO

Collector-Base Breakdown Voltage IC = -10 μA, IB = 0

-60

V

BVCEO

Collector-Emitter Breakdown

Voltage(5)

IC = -1.0 mA, IE = 0

-45

V

BVEBO

Emitter-Base Breakdown Voltage

IE = -10 μA, IC = 0

-6.0

V

ICBO

Collector Cut-Off Current

VCB = -50 V, IE = 0

-50

nA

ICES

Collector Cut-Off Current

VCE = -40 V, IE = 0

-50

nA

IEBO

Emitter Cut-Off Current

VEB = -4.0 V, IC = 0

-50

nA

On Characteristics

hFE

DC Current Gain

IC = -100 μA,

VCE = -1.0 V

MMBT200

80

PN200A

240

IC = -10 mA,

VCE = -1.0 V

MMBT200

100

450

PN200A

300

600

IC = -100 mA,

VCE = -1.0 V

(5)

PN200A

100

IC = -150 mA,

VCE = -5.0 V

(5)

MMBT200

100

350

PN200A

100

VCE(sat)

Collector-Emitter Saturation

Voltage

IC = -10 mA, IB = -1.0 mA

-0.2

V

IC = -200 mA, IB = -20 mA

(5)

-0.4

VBE(sat)

Base-Emitter Saturation

Voltage

IC = -10 mA, IB = -1.0 mA

-0.85

V

IC = -200 mA, IB = -20 mA

(5)

-1.00

Small Signal Characteristics

fT

Current Gain - Bandwidth Product

VCE = -20 V, IC = -20 mA,

250

MHz

Cob

Output Capacitance

VCB = -10 V, f = -1.0 MHz

6.0

pF

NF

Noise Figure

IC = -100 μA, VCE = -5.0 V,

RG = 2.0 kΩ, f = 1.0 kHz

4.0

dB

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