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STTH12003 数据表(PDF) 2 Page - STMicroelectronics |
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STTH12003 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current VR = 300 V Tj = 25 °C 120 µA Tj = 125 °C 0.12 1.2 mA VF ** Forward voltage drop IF = 60 A Tj = 25 °C 1.25 V Tj = 125 °C 0.85 1 Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0042 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions Min. Typ. Max. Unit trr IF = 0.5 A Irr = 0.25 A IR = 1A Tj = 25 °C 55 ns IF = 1 A dIF/dt = - 50 A/ µs VR = 30 V Tj = 25 °C 70 tfr IF = 60 A dIF/dt = 200 A/ µs Tj = 25 °C 600 ns VFP VFR = 1.1 x VF max. Tj = 25 °C 5V Sfactor Vcc = 200 V IF = 60 A dIF/dt = 200 A/ µs Tj = 125 °C 0.3 - IRM 14 A RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode Total 0.8 0.45 °C/W Rth (c) Coupling 0.1 When the diodes 1 and 2 are used simultaneously: ∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) THERMAL RESISTANCES STTH12003TV 2/5 |
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