0

1020304050607080

0

10

20

30

40

50

60

70

80

90

IF(av) (A)

P1(W)

T

δ=tp/T

tp

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Conduction losses versus average current

(per diode).

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

1

10

100

600

VFM(V)

IFM(A)

Tj=125°C

Typical values

Tj=25°C

Maximum values

Tj=125°C

Maximum values

Fig. 2: Forward voltage drop versus forward

current (per diode)

.

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

T

δ=tp/T

tp

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

0

50 100 150 200 250 300 350 400 450 500

0

20

40

60

80

100

120

140

160

180

200

trr(ns)

VR=200V

Tj=125°C

IF=2*IF(av)

IF=IF(av)

IF=0.5*IF(av)

dIF/dt(A/µs)

Fig. 5: Reverse recovery time versus dIF/dt (90%

confidence, per diode).

0

50 100 150 200 250 300 350 400 450 500

0

5

10

15

20

25

30

dIF/dt(A/µs)

IRM(A)

VR=200V

Tj=125°C

IF=2*IF(av)

IF=IF(av)

IF=0.5*IF(av)

Fig. 4:

Peak reverse recovery current versus

dIF/dt (90% confidence, per diode).

0

50 100 150 200 250 300 350 400 450 500

0.0

0.1

0.2

0.3

0.4

0.5

0.6

S factor

VR=200V

Tj=125°C

dIF/dt(A/µs)

Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical

values, per diode).

STTH12003TV

3/5