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STTH1R02ZF 数据表(PDF) 2 Page - STMicroelectronics |
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STTH1R02ZF 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STTH1R02ZF 2/8 DocID030263 Rev 1 1 Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(AV) Average forward current Tlead = 153 °C , δ = 0.5 square wave 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 25 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature +175 °C Table 3: Thermal parameter Symbol Parameter Maximum Unit Rth(j-l) Junction to lead 23 °C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 0.5 µA Tj = 125 °C - 1 10 µA VF(2) Forward voltage drop Tj = 25 °C IF = 1 A - 0.87 1.00 V Tj = 125 °C - 0.75 0.85 Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.75 x IF(AV) + 0.1 x IF2(RMS) Table 5: Dynamic electrical characteristics Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 1 A dIF /dt = 50 A/μs VR = 30 V Tj = 25 °C - 25 32 ns IF = 1 A dIF /dt = 100 A/μs VR = 160 V Tj = 125 °C - 30 IRM Reverse recovery current - 2.2 A Qrr Reverse recovery charges - 34 nC |
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