STTH1R02ZF datasheet(4/8 Pages) STMICROELECTRONICS

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Characteristics

STTH1R02ZF

4/8

DocID030263 Rev 1

Figure 7: Reverse recovery time versus dIF / dt

(typical values)

Figure 8: Reverse recovery softness factor versus

dIF / dt (typical values)

Figure 9: Dynamic parameters versus junction

temperature (reference Tj = 125 °C)

Figure 10: Junction capacitance versus reverse

voltage applied (typical values)

Figure 11: Thermal resistance junction to ambient

total versus copper surface under each lead

(typical values)

100

200

300

400

500

(ns)

dlF/dt (A/µs)

F = 1A

VR= 160 V

Tj = 125 °C

0.0

0.2

0.4

0.6

0.8

100

200

300

400

500

factor

dlF/dt (A/µs)

F = 1A

VR= 160 V

Tj = 125 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

125

S; QRR; IRM [Tj] / S; QRR; IRM [Tj=125°C]

Tj(°C)

F=1A

R=160V

T =125°C

100

1000

C(pF)

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

= 25 °C

100

150

200

250

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

SOD123Flat

SCu(cm²)

Rth(j-a)(C/W)

Epoxy printed board FR4, eCu = 35 µm

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