1

Characteristics

Table 1. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

300

V

IF(RMS) Forward rms current

30

A

IF(AV)

Average forward current δ = 0.5, square

wave

TO-220AB, D²PAK, I²PAK TC = 140 °C

Per diode

10

A

TO-220FPAB

TC = 115 °C

All types

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

110

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature

175

°C

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB, D²PAK, I²PAK

Per diode

2.5

°C/W

TO-220FPAB

4.6

TO-220AB, D²PAK, I²PAK

Total

1.3

TO-220FPAB

4.0

Rth(c)

Coupling

TO-220AB, D²PAK, I²PAK

0.1

°C/W

TO-220FPAB

3.5

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = 300 V

-

20

µA

Tj = 125 °C

-

30

300

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

1.25

V

Tj = 125 °C

-

0.85

1.0

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.75 x IF(AV) + 0.025 x IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses:

STTH2003

Characteristics

DS1213 - Rev 12

page 2/16