Figure 5. Peak reverse recovery current versus dIF/dt

(typical values, per diode)

0

50

100

150

200

250

300

350

400

450

500

0

2

4

6

8

10

12

14

16

I

(A)

RM

dI /dt(A/µs)

F

I =2 x I

F

F(AV)

I =I

F

F(AV)

I =0.5 x I

F

F(AV)

V =200V

T =125°C

R

j

Figure 6. Reverse recovery time versus dIF/dt (typical

values, per diode)

0

50

100

150

200

250

300

350

400

450

500

0

20

40

60

80

100

t (ns)

rr

dI /dt(A/µs)

F

I =2 x I

F

F(AV)

I =I

F

F(AV)

I =0.5 x I

F

F(AV)

V =200V

T =125°C

R

j

Figure 7. Softness factor versus dIF/dt (typical values, per

diode)

0

50

100

150

200

250

300

350

400

450

500

0.00

0.10

0.20

0.30

0.40

0.50

0.60

S factor

dI /dt(A/µs)

F

V =200V

T =125°C

R

j

Figure 8. Relative variation of dynamic parameters versus

junction temperature (reference: Tj = 125 °C)

25

50

75

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

T (°C)

j

S factor

IRM

Figure 9. Transient peak forward voltage versus dIF/dt

(typical values, per diode) (TO-220AB)

0

50

100

150

200

250

300

350

400

450

500

0

2

4

6

8

10

V (V)

FP

dI /dt(A/µs)

F

I =I

T =125°C

F

F(AV)

j

Figure 10. Forward recovery time versus dIF/dt (typical

values, per diode)

0

50

100

150

200

250

300

350

400

450

500

0

100

200

300

400

500

t (ns)

fr

dI /dt(A/µs)

F

I =I

T =125°C

F

F(AV)

j

V =1.1 x V max.

FR

F

STTH2003

Characteristics (curves)

DS1213 - Rev 12

page 4/16