Figure 7. Reverse recovery time versus dIF/dt (typical

values)

0

30

60

90

120

0

50

100

150

200

250

300

350

400

450

500

tRR(ns)

IF = I

F(AV)

VR=400V

Tj=125°C

dIF/dt(A/µs)

Figure 8. Reverse recovery charges versus dIF/dt (typical

values)

0

100

200

300

400

0

50

100

150

200

250

300

350

400

450

500

QRR(nC)

dIF/dt(A/µs)

IF = I

F(AV)

VR=400V

Tj=125°C

Figure 9. Reverse recovery softness factor versus dIF/dt

(typical values)

0.0

0.2

0.4

0.6

0.8

0

50

100

150

200

250

300

350

400

450

500

dIF/dt(A/µs)

SFACTOR

IF = I

F(AV)

VR=400V

Tj=125°C

Figure 10. Relative variations of dynamic parameters

versus junction temperature

0.0

0.4

0.8

1.2

1.6

2.0

25

50

75

100

125

Tj(°C)

IF=IF(AV)

VR=400 V

Reference: Tj=125 °C

IRM

SFACTOR

QRR

Figure 11. Junction capacitance versus reverse voltage

applied (typical values)

10

100

1000

1

10

100

1000

C(pF)

F=1MHz

Vosc=30mVRMS

Tj=25°C

VR(V)

Figure 12. Thermal resistance junction to ambient versus

copper surface under tab (typical values, epoxy printed

board FR4, eCu = 70 µm)

0

10

20

30

40

50

60

70

80

90

100

0

5

10

15

20

25

30

35

40

SCu(cm²)

Rth(j-a) (°C/W)

DPAK

Epoxy printed circuit board, copper thickness: 35 µm

STTH25M06

Characteristics (curves)

DS13169 - Rev 2

page 5/13