STTH6003

Characteristics

DocID6144 Rev 7

5/9

Figure 5: Reverse recovery time versus dIF/dt

(90% confidence, per diode)

Figure 6: Softness factor (tb/ta) versus dIF/dt

(typical values, per diode)

Figure 7: Relative variation of dynamic parameters

versus junction temperature (Tj = 125 °C)

Figure 8: Transient peak forward voltage versus

dIF/dt (90% confidence, per diode)

Figure 9: Forward recovery time versus dIF/dt (90% confidence, per diode)

0

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0

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180

dlF/dt(A/µs)

IF = 2 x IF(AV)

IF = IF(AV)

IF = 0.5 x IF(AV)

VR = 200 V

Tj = 125 °C

trr(ns)

0

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0.0

0.1

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0.3

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0.5

0.6

dlF/dt(A/µs)

VR = 200 V

Tj = 125 °C

Sfactor

0

5 0

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0

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IF = IF(AV)

Tj = 125 °C

VFP(V)

dlF/dt(A/µs)

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0

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tfr(ns)

dlF/dt(A/µs)

IF = IF(AV)

VFR = 1.1 x VFmax

Tj = 125 °C