Characteristics

STTH6003

2/9

DocID6144 Rev 7

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

300

V

IF(RMS)

Forward rms current

60

A

IF(AV)

Average forward current

δ = 0.5, square wave

Tc = 135 °C

Per diode

30

A

Per device

60

IFSM

Surge non repetitive forward current

tP = 10 ms sinusoidal

300

A

IRSM

Non repetitive peak reverse current

tP

= 100 μs square

4

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature

+175

°C

Table 3: Thermal parameters

Symbol

Parameter

Maximum

Unit

Rth(j-c)

Junction to case

Per diode

1

°C/W

Total

0.55

Rth(c)

Coupling

0.1

When the diodes 1 and 2 are used simultaneously:

Δ Tj (diode1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = 300 V

-

60

µA

Tj = 125 °C

-

60

600

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 30 A

-

1.25

V

Tj = 125 °C

-

0.85

1

Notes:

(1)Pulse test: tp = 5 ms, δ < 2 %

(2)Pulse test: tp = 380 μs, δ < 2 %

To evaluate the maximum conduction losses, use the following equation:

P = 0.75 x IF(AV) + 0.008 x IF2(RMS)