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STPSC40G12 数据表(PDF) 2 Page - STMicroelectronics |
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STPSC40G12 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) 1200 V EAS(1) Single pulse avalanche energy, starting Tj = 25 °C, IAS = 9.3 A, L = 10 mH 432 mJ IF(RMS) Forward rms current 79 A IF(AV) Average forward current Tc = 140 °C, δ = 1 40 A IFRM Repetitive peak forward current Tc = 140 °C, Tj = 175 °C, δ = 0.1, fsw > 10 kHz 158 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tc = 25 °C 280 A Tc = 150 °C 250 tp = 10 µs square Tc = 25 °C 1700 Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -55 to +175 °C 1. Please refer to Figure 1. Table 2. Thermal resistance parameters Symbol Parameter Value Unit Typ. Max. Rth(j-c) Junction to case 0.25 0.40 °C/W For more information, please refer to the following application note: • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM - 20 300 µA Tj = 150 °C - 67 1000 Tj = 175 °C - 150 VF (2) Forward voltage drop Tj = 25 °C IF = 40 A - 1.35 1.50 V Tj = 150 °C - 1.75 2.10 Tj = 175 °C - 1.90 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.924 x IF(AV) + 0.029 x IF 2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode STPSC40G12 Characteristics DS14116 - Rev 1 page 2/10 |
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